| Rated voltage(VR)
: 160Vdc-250Vdc, 400Vdc-630Vdc |
| Category voltage(VC)
: Up to +85 Vc = VR For temperature between +85°C
and +105°C a decreasing factor of 1.25% per degree °C
on the nominal voltage VR has to be applied. |
| Capacitance range
: 1000 pF to 10 µF |
| Capacitance values
: E6 series (IEC 63 Norm) |
| Capacitance tolerances(measured
at 1KHz) : ±5%(J), ±10%(K), ±20%(M) |
| Total self inductance(L)
: (Lead length~2mm) |
| L.S.(mm) |
7.5 |
10 |
15 |
22.5 |
27.5 |
L(nH) |
8 |
9 |
10 |
18 |
18 |
|
| Dissipation factor(DF)
: tgd x 10-4 at +25°C ±5°C |
| KHz |
C<1µF |
0.1µF
to 1µF |
>1µF |
| 1 |
6 |
6 |
6 |
| 10 |
10 |
20 |
|
| 100 |
30
|
|
|
|
| Insulation resistance : |
| Test
ConditionC<1µF |
Performance
|
| Temperature |
+25°C
±5°C |
1
x 105MO for C0.33µF(5
x 105MO)* |
| Voltage
charge time |
1 minute |
30000
s for C 0.33µF(150000 s)* |
| Votage
charge |
100Vdc |
* Typical
value |
|
| Test voltage between terminals :
1.6 x VR applied for 2sec. at +25°C ±5°C |
| Maximum pulse rise time dv/dt (V / µ
sec) : |
| Vn |
Lead
spacing (mm) |
| 7.5 |
10 |
15 |
22.5 |
27.5 |
| 160 |
5.5 |
4 |
2 |
1.5 |
1 |
| 250 |
15 |
11 |
7 |
4 |
3 |
| 400 |
35 |
20 |
10 |
5.5 |
5 |
| 630 |
55 |
30 |
15 |
8 |
7 |
|
If the working voltage(V) is lower than nominal
voltage(VR), the capacitor may work at higher dv/dt. In this
case the maximum value allowed is obtained by multiplying the
above value(see table dv/dt) with the ratio VR / V. The pulse
characteristic Ko depends on the voltage wave-form and in any
case it cannot overcome the value given in the above table.
The dv/dt is carried out at 10 times the above values. |
| Soldering : |
| Test
Condition |
Performance
|
| Soldering
temperature |
+260°C
±5°C |
Capacitance
change ( C/C) |
±1% |
Dipping
time
(with heat screen) |
10sec.
±1sec. |
DF
change tgd |
<10x10-4 at 10KHz
for C1µF |
| 10x10-4
at 1KHz for C>1µF |
| Insulation
resistance |
limit value |
|
| Damp heat test : |
| Test
Condition |
Performance
|
| Temperature |
+40°C±2°C |
Capacitance
change (C/C) |
±2% |
| Relative
humidity |
93% ±2%
|
Dissipation
factor change tgd |
10x10-4
at 1KHz |
| Test
duration |
56 days |
Insulation
resistance |
50% of limit value |
|
| Lift test : |
| Test
Condition |
Performance
|
| Temperature |
+85°C
±2°C |
Capacitance
change (C/C) |
±3% |
| Test
duration |
2000 Hours
|
DF
change tgd |
10x10-4
at 10KHz for C1µF |
| 10x10-4
at 1KHz for C1µF |
| Voltage
applied |
1.25 x Vn |
Insulation
resistance |
50% of limit value |
|
 |