GENERAL TECHNICAL DATA ELECTRICAL DATA DIMENSION (mm) CAPACITANCE VALUE
ELECTRICAL DATA
Nominal voltage(Vn) : 63 Vdc-100Vdc-160Vdc-250Vdc-400Vdc-630Vdc-1000Vdc
Category voltage(Vc) : Up to 85 Vc = Vn
For temperature between +85°C and +100°C a decreasing factor of 1.25% per degree °C on the nominal voltage Vn has to be applied.
Capacitance range : 1000 pF to 10 µF
Capacitance values : Values in compliance with IEC 63 Norm. E6 series
Capacitance tolerances : ±10%, ±20%(upon request ±5%)
Total self inductance : 8nH
Pitch(mm) 10 15 22.5 27.5
(L9Nh) 0 15 18 18
Dissipation factor(DF) : tgd x 10-4 at +25°C ±5°C
 KHz C=1µF C>1µF
1 <100 <100
10 <150  
Insulation resistance :
Test condition
Temperature : +25°C ±5°C
Voltage charge time : 1 minute
Votage charge : 50 Vdc for Vn 100 Vdc, 100Cdc for Vn=100Vdc
For Vn 100 Vdc :
30,000 MO for CC 0.33µF(5.10-4MO)(*)
10,000 MO for CC 0.33µF(1,700sec.)(*)
For Vn 100Vdc :
10,000MO for C 0.1µF(5.10-4MO) (*)
10,000sec. for C 0.1µF(5,000sec.) (*)
Test voltage between terminals : 1.6 x Vn applied for 2sec. at +25°C ±5°C
(*) - typical value
Maximum pulse rise time dv/dt (V / µ sec) :
Vn Pitch(mm)
10 15 22.5 27.5
60 3 1.5 1 1
100 6 3 2 1
160 8 5 3 2
250 11 7 4 3
400 20 10 5.5 5
630 30 15 8 7
1000 60 15 15 10
If the working voltage(V) is lower than nominal voltage(Vn), the capacitor can work at higher dv/dt. In this case the maximum value allowed is obtained by multiplying the above value(see table) with the ratio Vn / V
Soldering :
Test Condition Performance
Soldering temperature +260°C ±5°C Capacitance change C/C <±2%
Soldering duration 10sec. ±1sec. DF change tgd <30. 10-4 at 10KHz for C<1µF
<20. 10-4 at 0KHz for C>1µF
    Insulation resistance < limit value
Damp heat test :
Test Condition Performance
Temperature +40°C Capacitance change C/C < ±5%
Relative humidity 93% ±2%
Dissipation factor change tgd <50. 10-4 at 10KHz
Test duration 56 days Insulation resistance <50% of limit value
Lift test :
Test Condition Performance
Temperature +105°C Capacitance change C/C <±5%
Test duration 1000 Hours
DF change tgd <30·10-4 at 10KHz for C<1µF
<20·10-4 at 0KHz for C<1µF
Voltage applied 1.25 x Vn Insulation resistance > 50% of limit value
Long term stability :
Test Condition Performance
Storage Standard environmental condition Capacitance change C/C <±3% for C < 0.1µF
<±2% for C >0.1µF