GENERAL TECHNICAL DATA ELECTRICAL DATA DIMENSION (mm) CAPACITANCE VALUE
ELECTRICAL DATA
Nominal voltage(Vn) : 63 Vdc-100Vdc-250Vdc-400Vdc-630Vdc
Category voltage(Vc) : Up to 85 Vc = Vn
For temperature between +85°C and +100°C a decreasing factor of 1.25% per degree °C on the nominal voltage Vn has to be applied.
Capacitance range : 1000 pF to 1 µF
Capacitance values : Values in compliance with IEC 63 Norm. E6 series
Capacitance tolerances (at 1KHz) : (at 1KHz) : ±10%, ±20%(upon request ±5%)
Total self inductance : 8nH
Dissipation factor(DF) : tgδ x 10-4 at +25°C ±5°C
 KHz tgδ x 10-4
1 <100
10 <150
Insulation resistance :
Temperature
Temperature : +25°C ±5°C
Voltage charge time : 1 minute
Votage charge : 50 Vdc for Vn 100 Vdc, 100Cdc for Vn=100Vdc
For Vn 100 Vdc : 30,000 MΩ(5.104MΩ)(*)
For Vn 100Vdc :
>10,000MΩ C 0.1µF(5.10-4MΩ) (*)
>10,000sec. for C 0.1µF(5,000sec.) (*)
Test voltage between terminals : 1.6 x Vn applied for 2sec. at +25°C ±5°C
Maximum pulse rise time(dv/dt) :
Vn (V / µsec.)
60 5
 100 6
 250 15
400 30
630 40
If the working voltage(V) is lower than nominal voltage(Vn), the capacitor can work at higher dv/dt. In this case the maximum value allowed is obtained by multiplying the above value(see table) with the ratio Vn / V
Soldering :
Test Condition Performance
Soldering temperature +260°C ±5°C Capacitance change ¥ÄC/C ±2%
Soldering duration 5sec. ±1sec.
DF change ¥Ä tg¥ä 30กค10-4 at 10KHz
    Insulation resistance limit value
Damp heat test :
Test Condition Performance
Temperature +40°C Capacitance change ¥ÄC/C ±5%
Relative humidity 93% ±2%
Dissipation factor change¥Ä tg¥ä 50·10-4 at 1KHz
Test duration 21 days Insulation resistance 50% of limit value
Lift test :
Test Condition Performance
Temperature +105°C Capacitance change ¥ÄC/C ±5%
Test duration 1000 Hours
DF change ¥Ä tg¥ä 50·10-4 at 1KHz
Voltage applied 1.25 x Vn Insulation resistance 50% of limit value
Long term stability :
Test Condition Performance
Storage Standard environmental conditions Capacitance change ¥ÄC/C <±3% for C < 0.1µF
<±2% for C < 0.1µF