Nominal voltage(Vn)
: 63 Vdc-100Vdc-250Vdc-400Vdc-630Vdc |
Category voltage(Vc)
: Up to 85 Vc = Vn
For temperature between +85°C and +100°C a
decreasing factor of 1.25% per degree °C on the nominal
voltage Vn has to be applied. |
Capacitance range
: 1000 pF to 1 µF |
Capacitance values
: Values in compliance with IEC 63 Norm. E6 series |
Capacitance tolerances
(at 1KHz) : (at 1KHz) : ±10%, ±20%(upon request
±5%) |
Total self inductance
: 8nH |
Dissipation factor(DF)
: tgδ x 10-4 at +25°C ±5°C |
KHz |
tgδ x 10-4 |
1 |
<100 |
10 |
<150 |
|
Insulation resistance : |
Temperature
Temperature : +25°C ±5°C
Voltage charge time : 1 minute
Votage charge : 50 Vdc for Vn 100 Vdc, 100Cdc for Vn=100Vdc
For Vn 100 Vdc : 30,000 MΩ(5.104MΩ)(*)
For Vn 100Vdc : >10,000MΩ C 0.1µF(5.10-4MΩ)
(*) >10,000sec. for C 0.1µF(5,000sec.) (*) |
Test voltage between terminals : 1.6
x Vn applied for 2sec. at +25°C ±5°C |
Maximum pulse rise time(dv/dt) : |
Vn |
(V / µsec.) |
60 |
5 |
100 |
6 |
250 |
15 |
400 |
30 |
630 |
40 |
|
If the working voltage(V) is lower than nominal
voltage(Vn), the capacitor can work at higher dv/dt. In this
case the maximum value allowed is obtained by multiplying the
above value(see table) with the ratio Vn / V |
Soldering : |
Test
Condition |
Performance
|
Soldering
temperature |
+260°C
±5°C |
Capacitance
change ¥ÄC/C |
±2% |
Soldering
duration |
5sec. ±1sec.
|
DF
change ¥Ä tg¥ä |
30กค10-4 at 10KHz |
|
|
Insulation
resistance |
limit value |
|
Damp heat test : |
Test
Condition |
Performance
|
Temperature |
+40°C |
Capacitance
change ¥ÄC/C |
±5% |
Relative
humidity |
93% ±2%
|
Dissipation
factor change¥Ä tg¥ä |
50·10-4 at 1KHz |
Test
duration |
21 days |
Insulation
resistance |
50% of limit value |
|
Lift test : |
Test
Condition |
Performance
|
Temperature |
+105°C |
Capacitance
change ¥ÄC/C |
±5% |
Test
duration |
1000 Hours
|
DF
change ¥Ä tg¥ä |
50·10-4 at 1KHz |
Voltage
applied |
1.25 x Vn |
Insulation
resistance |
50% of limit value |
|
Long term stability : |
Test
Condition |
Performance
|
Storage |
Standard
environmental conditions |
Capacitance
change ¥ÄC/C |
<±3%
for C < 0.1µF |
<±2% for C
< 0.1µF |
|
|